Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.
Read More
Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.
Read Less
Add this copy of Low Power and Reliable Sram Memory Cell and Array to cart. $94.42, new condition, Sold by Basi6 International rated 5.0 out of 5 stars, ships from Irving, TX, UNITED STATES, published 2013 by Springer.
Add this copy of Low Power and Reliable Sram Memory Cell and Array to cart. $103.32, new condition, Sold by Ingram Customer Returns Center rated 5.0 out of 5 stars, ships from NV, USA, published 2013 by Springer.
Add this copy of Low Power and Reliable Sram Memory Cell and Array to cart. $116.11, new condition, Sold by GreatBookPrices rated 4.0 out of 5 stars, ships from Columbia, MD, UNITED STATES, published 2013 by Springer.
Choose your shipping method in Checkout. Costs may vary based on destination.
Seller's Description:
New. Trade paperback (US). Glued binding. 144 p. Contains: Unspecified. Springer Advanced Microelectronics, 31. In Stock. 100% Money Back Guarantee. Brand New, Perfect Condition, allow 4-14 business days for standard shipping. To Alaska, Hawaii, U.S. protectorate, P.O. box, and APO/FPO addresses allow 4-28 business days for Standard shipping. No expedited shipping. All orders placed with expedited shipping will be cancelled. Over 3, 000, 000 happy customers.
Add this copy of Low Power and Reliable Sram Memory Cell and Array to cart. $133.38, good condition, Sold by Bonita rated 4.0 out of 5 stars, ships from Santa Clarita, CA, UNITED STATES, published 2013 by Springer.
